THE BASIC PRINCIPLES OF N TYPE GE

≤ 0.fifteen) is epitaxially developed on the SOI substrate. A thinner layer of Si is developed on this SiGe layer, after which the construction is cycled as a result of oxidizing and annealing levels. Due to the preferential oxidation of Si in excess of Ge [sixty eight], the original Si1–Price. Interestingly, the group uncovered that raising th